Vol. 1 (2025)

Articles

Atomic-Scale Material Removal Mechanisms in CeO₂-Based Chemical Mechanical Polishing of 4H-SiC

Published 2025-12-26

  • Xiaofeng Zou
    • ,
  • Zheng Liu
    • ,
  • Wanchao Liu
    • ,
  • Zhongyang Liu
    • ,
  • Wenwu Zhang
    • ,
  • Zejia Zhao

Xiaofeng Zou
Institute of Semiconductor Manufacturing Research, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, China

Zheng Liu
Institute of Semiconductor Manufacturing Research, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, China

Wanchao Liu
ZTE Corporation, No. 55, Keji South Road, Nanshan District, Shenzhen, 518057, Guangdong, China

Zhongyang Liu
The Photonics Center of Shenzhen University, Shenzhen, 518060, Guangdong, China

Wenwu Zhang
State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, Guangdong, China

Zejia Zhao
Institute of Semiconductor Manufacturing Research, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, China and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, Guangdong, China

Abstract

Silicon carbide (SiC), as a third-generation semiconductor material, is widely used in satellite avionics cooling systems and high-power aircraft electronics. Chemical mechanical polishing (CMP) is a critical process for achieving global surface planarization in semiconductors. Understanding the atomic-scale material removal mechanisms in CMP of SiC is crucial for achieving defect-free surfaces in SiC-based devices. This study combines molecular dynamics (MD) simulations with experimental investigations to elucidate the mechanochemical interactions between CeO₂ abrasives and SiC substrates during CMP. Through atomistic MD simulations, we demonstrate how abrasive particle size influences localized temperature elevations, stress distributions, and subsurface amorphization, as well as its potential impact in aerospace thermal environments. The results indicate that abrasives larger than 2 nm (>2 nm) promote dislocation propagation and lattice destabilization. A novel dual-stage polishing method is proposed, which yielding an ultra-smooth surface with an arithmetic mean surface roughness (Sa) of 0.157 nm. Mechanistic insights derived from MD simulations, particularly regarding the dynamic oxidation of SiO₂ and defect-passivated material removal, are experimentally validated, confirming minimal subsurface damage (<1 nm in depth) under optimized abrasive and redox cycling conditions. This work establishes a framework for achieving atomic-level surface perfection in SiC by decoupling material removal rate from surface damage through tailored abrasive design and process parameter optimization. The findings provide essential guidance for non-destructive CMP of ultra-hard semiconductor materials, effectively linking atomic-scale mechanisms to macroscopic surface engineering outcomes. The outcome of this paper is potential for aerospace thermal management systems, including thermal protection systems (TPS) in hypersonic vehicles, satellite avionics, and high-power aircraft electronics.

Keywords

SiC, Material removal mechanisms, Molecular Dynamics simulation, CMP, Surface damage

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